Paper Title

Single Electron Transistor and its Simulation methods

Authors

  • Sanjay. S
  • Pankaj Kumar Sinha

Keywords

Quantum Dot; Columbic blockade; orthodox theory; SET; PSPICE; SIMON

Abstract

Single-electron transistor (SET) is a key element of current research area of nanotechnology which can offer low power consumption and high operating speed. Single electron transistor [SET] is a new nanoscaled switching device because single-electron transistor retains its scalability even on an atomic scale and besides this; it can control the motion of a single electron. The goal of this paper is to discuss about the basic physics of nanoelectronic device ‘Single electron transistor [SET]’ which is capable of controlling the transport of only one electron and focuses on some basic device characteristics like Orthodox theory ,tunneling effect ,Coulomb blockade ,Quantum Dot & ‘Coulomb staircase’ on which this Single electron transistor [SET] works. Various simulation methodology of the single electron transistor is discussed along with the tools available like Spice, SIMON, SECS etc . The physics underlying the operation of SET is explained, a brief history of its invention is presented.

Article Type

Published

How To Cite

Sanjay. S, Pankaj Kumar Sinha. "Single Electron Transistor and its Simulation methods".INTERNATIONAL JOURNAL OF ENGINEERING DEVELOPMENT AND RESEARCH ISSN:2321-9939, Vol.2, Issue 2, pp.1907-1925, URL :https://rjwave.org/ijedr/papers/IJEDR1402100.pdf

Issue

Volume 2 Issue 2 

Pages. 1907-1925

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