L-Band Power Amplifier Design for WCDMA Applications
- Mayurdhvaj Sindhav
- A.K.Sisodia
Power Amplifier (PA); ADS tools; PAE; WCDMA; pHEMT
Mobile communication is one of the important areas and it is developing extremely fast in present times. Nowadays the use of 3G mobile communication systems seem to be the standard, while 4G stands for the next generation of wireless and mobile communications. This paper presents the design and simulation of Power Amplifier (PA) at 1.8 GHz. This PA is designed for WCDMA (Wideband Code Division Multiple Access) applications. This amplifier uses RFMD�s FPD3000SOT89EDS which is a high-linearity packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). The key points are analysis device's stability with Stability factor and the input and output impedance matching with Smith Chart and Tuning. Finally, the performance parameters of PA were obtained with the simulation of S parameters. The simulation has been performed using Advanced Design System (ADS) 2011.10 simulation tools.
Mayurdhvaj Sindhav, A.K.Sisodia. "L-Band Power Amplifier Design for WCDMA Applications".INTERNATIONAL JOURNAL OF ENGINEERING DEVELOPMENT AND RESEARCH ISSN:2321-9939, Vol.2, Issue 1, pp.1036-1040, URL :https://rjwave.org/ijedr/papers/IJEDR1401185.pdf
Volume 2 Issue 1
Pages. 1036-1040