Design of transparent a-IGZO thin film transistor for AMOLED display
- S.Suruthi
- K.Srinidhi
- Rajat kumar dwibedi
Thin-film transistor,a-IGZO,RC delay,multilayered gate electrode.
Thin-film transistor(TFT) are key elements for next generation high resolution displays.Transparent amorphous oxide semiconductors especially a-InGaZnO are the most recent TFT materials of interest for driving active matrix displays.In this paper we designed indium-gallium-zinc oxide (a-IGZO) TFT with highly transparent and multilayered gate electrodes using SILVACO TCAD Software which results in reduced RC delay and reduce power consumption by controlling threshold voltage.we obtain threshold voltage of 0.5V and mobility of 11.57 cm2/(V•s).
S.Suruthi, K.Srinidhi, Rajat kumar dwibedi. "Design of transparent a-IGZO thin film transistor for AMOLED display".INTERNATIONAL JOURNAL OF ENGINEERING DEVELOPMENT AND RESEARCH ISSN:2321-9939, Vol.5, Issue 1, pp.726-731, URL :https://rjwave.org/ijedr/papers/IJEDR1701115.pdf
Volume 5 Issue 1
Pages. 726-731